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II. DEVICE STRUCTURE AND DESIGN PARAMETERS<br>The device structures and significant design parameters<br>for conventional, MSO and 2-step FP-MOSFETs are shown<br>in Fig. 1(a)–(c). Those FP-MOSFETs apply the source fieldplate structure, so-called the shielded-gate structure [7], to<br>promise very low gate-drain charge (Qgd), instead of the gate<br>field-plate structure in previous work [10]. The most part of<br>the VB is determined by poly-silicon field-plate length LFP, and<br>the remaining part is shared by p-base/n-drift junction and<br>trench bottom region. Field-plate oxide thickness tOX,t and tOX,b<br>correspond to a position of top and bott
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